Abstract: Lateral gallium nitride (GaN) high-electronmobility transistors (HEMTs) offer notable advantages over traditional silicon (Si) and silicon carbide (SiC) devices, including faster switching ...
Abstract: Compared to silicon (Si), silicon carbide (SiC) is a promising and more suitable material for higher power semiconductors. Since SiC has a wider bandgap than silicon, it can achieve stable ...
In the present study, Friction Stir Welding (FSW) of Nickel Aluminum Bronze (NAB) alloy was carried out by varying the axial load, rotation speed and welding speed rate. Micro-structural analyses of ...
The Speroni STB Aequilibria line of tool balancing systems from Big Daishowa reportedly contributes to higher speeds, higher chip removal rates and better surface finish. It also helps achieve less ...
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