SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
Infineon Technologies AG introduced the highly efficient, fast recovery 650V Rapid 1 and Rapid 2 silicon diode families. The high performance devices, which combining Infineon's ultrathin wafer ...
The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...
Ahead of the upcoming APEC Conference, Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with ...
MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...
The introduction of silicon carbide (SiC) diodes has been a welcome solution to the reverse recovery losses in continuous conduction mode (CCM) boost power factor corrector (PFC) converters. While SiC ...
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...
Silicon nanocrystals have a size of a few nanometers and possess a high luminous potential. Scientists of KIT and the University of Toronto/Canada have now succeeded in manufacturing silicon-based ...
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