Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...

Austin, Tex. — Freescale Semiconductor has released seven LDMOS RF power transistors that are said to deliver exceptional performance and enable WCDMA and CDMA2000 base station transmitters to exploit ...

I have more information on a breakthrough in high power UHF solid-state amplifier efficiency. Freescale announced last Friday that its MRFE6VP8600H LDMOS RF power transistor can use up to 15 percent ...

NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. Compared to the previous generation, Gen8 increases ...

At the NAB Show, several transmitter manufacturers were showing new UHF solid-state DTV power amplifiers that were more efficient, cost less and occupied less space. Axcera showed a 10 kW average ...

This article is part of the TechXchange: Gallium Nitride (GaN). NXP rolled out a family of gallium-nitride (GaN)-based RF power amplifiers (PAs) that uniquely leverages top-side cooling to reduce the ...

NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...