FinFETs are known to be an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. It was first ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...
The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
The impact of spacer on the single event response of SOI FinFET at 14 nm technology node is investigated. Based on the device TCAD model, well-calibrated by the experimental data, it is found that the ...
How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...
At the recent 2018 IEEE International Electron Devices Meeting (IEDM), TSMC and National Tsing Hua University presented a paper on an ion detector or pH sensor based on a 16nm finFET technology.
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